2SA911
詳細参照ください→NPNコンプ/2SC1762 (み-023R/80個:YBB-64/3個:7H-G25/200個:Y-1015/700個:7-8/150個:7-77/30個:YBB-94/200個:7-1481/1500個:ラジ館5階/90個)
                                      在庫数: 2953
  
  
                    
                    
                    
                                ¥641
                                税込
                            
                                            
                            商品コード: 10110162
                        
                                                                                    
                                        
                    【↓詳細情報↓】
 2SA911    Si Transistor   PNP   Maximum Collector Power Dissipation (Pc): 0.47 W   Maximum Collector-Base Voltage |Vcb|: 850 V   Maximum Collector-Emitter Voltage |Vce|: 850 V   Maximum Emitter-Base Voltage |Veb|: 12 V   Maximum Collector Current |Ic max|: 0.1 A   Max. Operating Junction Temperature (Tj): 125 °C   Transition Frequency (ft): 9 MHz   Collector Capacitance (Cc): 16 pF   Forward Current Transfer Ratio (hFE) MIN: 30    Package: TO5
   2SA911    Si Transistor   PNP   Maximum Collector Power Dissipation (Pc): 0.47 W   Maximum Collector-Base Voltage |Vcb|: 850 V   Maximum Collector-Emitter Voltage |Vce|: 850 V   Maximum Emitter-Base Voltage |Veb|: 12 V   Maximum Collector Current |Ic max|: 0.1 A   Max. Operating Junction Temperature (Tj): 125 °C   Transition Frequency (ft): 9 MHz   Collector Capacitance (Cc): 16 pF   Forward Current Transfer Ratio (hFE) MIN: 30    Package: TO5 
                    
                 2SA911    Si Transistor   PNP   Maximum Collector Power Dissipation (Pc): 0.47 W   Maximum Collector-Base Voltage |Vcb|: 850 V   Maximum Collector-Emitter Voltage |Vce|: 850 V   Maximum Emitter-Base Voltage |Veb|: 12 V   Maximum Collector Current |Ic max|: 0.1 A   Max. Operating Junction Temperature (Tj): 125 °C   Transition Frequency (ft): 9 MHz   Collector Capacitance (Cc): 16 pF   Forward Current Transfer Ratio (hFE) MIN: 30    Package: TO5
   2SA911    Si Transistor   PNP   Maximum Collector Power Dissipation (Pc): 0.47 W   Maximum Collector-Base Voltage |Vcb|: 850 V   Maximum Collector-Emitter Voltage |Vce|: 850 V   Maximum Emitter-Base Voltage |Veb|: 12 V   Maximum Collector Current |Ic max|: 0.1 A   Max. Operating Junction Temperature (Tj): 125 °C   Transition Frequency (ft): 9 MHz   Collector Capacitance (Cc): 16 pF   Forward Current Transfer Ratio (hFE) MIN: 30    Package: TO5 
                     
   
                        
                    